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December 2001
FDC6318P
Dual P-Channel 1.8V PowerTrench ? Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
? Power management
? Load switch
Features
? –2.5 A, –12 V. R DS(ON) = 90 m ? @ V GS = –4.5 V
R DS(ON) = 125 m ? @ V GS = –2.5 V
R DS(ON) = 200 m ? @ V GS = –1.8 V
? High performance trench technology for extremely
low R DS(ON)
? SuperSOT TM -6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D1
S1
D2
4
3
5
2
SuperSOT
TM
-6
G1
S2
G2
6
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–12
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–2.5
A
– Pulsed
–7
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.318
Device
FDC6318P
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)
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相关代理商/技术参数
FDC6318P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6318P_Q 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6320 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
FDC6320C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6320C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6320C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6321C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6